Work

Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Year: 2013

Type: article

Abstract: In this work, tetrakis(dimethylamino)titanium precursor as well as in-situ oxidized ruthenium bottom electrode were used to grow rutile-structured titanium dioxide thin layers by plasma enhanced atomic layer deposition. Metal–insulator–metal capacitors have been elaborated in order to study the electrical properties of the device. It is shown that this process leads to devices exhibiting excellent results in terms of dielectric constant and leakage current.

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.4843515

Authors: John Pointet, Patrice Gonon, Lawrence Latu-Romain, Ahmad Bsiesy, Christophe Vallée

Institutions: Centre National de la Recherche Scientifique, Université Joseph Fourier, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2051025720

FWCI: 0.983

Cites: 15

Cited by: 21

Related to: 10