Work

Model for Schottky barrier and surface states in nanostructured n-type semiconductors

Year: 2002

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.1425434

Authors: C. Malagù, V. Guidi, M. Stefancich, M. C. Carotta, G. Martinelli

Institutions: University of Ferrara, Istituto Nazionale di Fisica Nucleare, Istituto Nazionale di Fisica Nucleare, Sezione di Ferrara

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2051834232

FWCI: 4.803

Cites: 23

Cited by: 134

Related to: 10