Work

A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

Year: 1998

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.120903

Authors: Pablo O. Vaccaro, Hajime Ohnishi, Kazuhisa Fujita

Institution: Advanced Telecommunications Research Institute International

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052050822

FWCI: 1.815

Cites: 9

Cited by: 34

Related to: 10