Work

Numerical simulation of the response of substrate traps to a voltage applied to the gate of a gallium arsenide field effect transistor

Year: 2014

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2014.03.007

Authors: N. Sengouga, Af. Meftah, Am. Meftah, M. Henini

Institutions: University of Biskra, University of Nottingham

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052067342

FWCI:

Cites: 26

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Related to: 10