Work

High Etch Rate Gallium Nitride Processing Using an Inductively Coupled Plasma Source

Year: 1999

Type: article

Source: physica status solidi (a)

DOI: 10.1002/(sici)1521-396x(199911)176:1<743::aid-pssa743>3.0.co;2-e

Authors: M. E. Ryan, A. C. Camacho, J. K. Bhardwaj

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052166752

FWCI: 0.215

Cites: 8

Cited by: 5

Related to: 10