Work

Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon

Year: 1991

Type: article

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/0168-583x(91)96235-d

Authors: E. Alves, M.F. Da Silva, J.C. Soares, A.A. Melo, J. May, V. Haslar, P. Seidl, U. Feuser, R. Vianden

Institutions: University of Bonn, University of Lisbon, Czech Technical University in Prague

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052214926

FWCI: 1.975

Cites: 8

Cited by: 5

Related to: 10