Work

Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy

Year: 1999

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.38.635

Authors: Hiroshi Yamaguchi, Yoshikazu Homma, Kiyoshi Kanisawa, Yoshiro Hirayama

Institution: NTT Basic Research Laboratories

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052227855

FWCI: 0.213

Cites: 69

Cited by: 16

Related to: 10