A comparative study of amorphous InGaZnO thin-film transistors with HfOxNyand HfO2gate dielectrics
Year: 2010
Type: article
Institutions: Jianghan University, Wuhan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: University of Hong Kong
OpenAlex ID: W2052390451