In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge
Year: 2014
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4886768
Authors: X. Liu, J. Kim, D. J. Suntrup, S. Wienecke, M. Tahhan, R. Yeluri, S. H. Chan, J. Lu, H. Li, S. Keller, U. K. Mishra
Institution: University of California, Santa Barbara
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Foundation
OpenAlex ID: W2052586950