Work

Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

Year: 2009

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2009.06.035

Authors: Qian Sun, Christopher D. Yerino, Yu Zhang, Yong Suk Cho, Soon-Yong Kwon, Bo Hyun Kong, Hyung Koun Cho, In-Hwan Lee, Jung Han

Institutions: Yale University, Sungkyunkwan University, Jeonbuk National University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2052632297

FWCI: 1.837

Cites: 31

Cited by: 16

Related to: 10