Work

Ohmic contacts on p-In0.53Ga0.47As prepared by Zn implantation into Pd-based metallizations

Year: 1995

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.588066

Authors: P. Ressel, H. Strusny, K. Vogel, J. Würfl, D. Fritzsche, H. Kräutle, E. Kuphal, K. Mause, M. Trapp, U. Richter

Institutions: Ferdinand-Braun-Institut, Deutsche Telekom (Germany)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2053216639

FWCI: 0.617

Cites:

Cited by: 3

Related to: 10