Work

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

Year: 2004

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/j.mseb.2004.07.052

Authors: J. Hållstedt, C. Isheden, M. Östling, R. Baubinas, J. Matukas, V. Palenskis, H.H. Radamson

Institutions: KTH Royal Institute of Technology, Vilnius University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2053394479

FWCI: 0.633

Cites: 10

Cited by: 9

Related to: 10