Work

2.5 W, C-band, GaAs/AlGaAs heterojunction bipolar power transistor

Year: 1989

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19890655

Authors: A.P. Long, I.H. Goodridge, J.P. King, A.J. Holden, J.G. Metcalfe, R.C. Hayes, R. Nicklin, R.C. Goodfellow

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2053728152

FWCI: 1.845

Cites: 1

Cited by: 4

Related to: 10