Influence of the period thickness and composition on the electro-optical properties of type-II InAs/GaSb midwave infrared superlattice photodetectors
Year: 2013
Type: article
Abstract: In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared photodiodes with different periods were investigated.Three devices with different SL periods, but the same cut-off wavelength at 5 µm at 77 K, were grown by molecular beam epitaxy on p-type GaSb substrates.The optical and electrical behaviours were characterized and analysed.Our investigations show strong influence of the SL composition on both the material properties and photodetector performances, such as the background doping concentration, shape of the response spectra and the dark current behaviours.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
Funder: Agence Nationale de la Recherche
OpenAlex ID: W2054529596
