Work

Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics

Year: 2008

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2008.10.105

Authors: S. Haffouz, F. Semond, J.A. Bardwell, T. Lester, H. Tang

Institutions: Institute for Microstructural Sciences, National Research Council Canada

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2054972095

FWCI:

Cites: 11

Cited by: 4

Related to: 10