Work

On the nature of ferromagnetism in diluted magnetic semiconductors: GaAs:Mn

Year: 2003

Type: article

Abstract: An energy level diagram is constructed on the basis of a microscopic Hamiltonian proposed for a description of interacting manganese impurities in diluted magnetic semiconductors (DMS). It is shown that ferromagnetism in p -type III-V DMS is governed by the strong hybridization of Mn 2+ -electrons with the mobile holes and localized states near the top of the valence band. The Curie temperature estimated from the proposed kinematic exchange agrees with the experiments on GaAs:Mn. The model is also applicable to the GaP:Mn system.

Source: Europhysics Letters (EPL)

DOI: 10.1209/epl/i2003-00224-x

Authors: P. M Krstajić, V. A Ivanov, F. M Peeters, V Fleurov, K Kikoin

Institutions: University of Antwerp, Russian Academy of Sciences, NS Kurnakova Institute of General and Inorganic Chemistry, Tel Aviv University, Ben-Gurion University of the Negev

Language: English

Topic: Magnetic and transport properties of perovskites and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Fonds Wetenschappelijk Onderzoek, Universiteit Antwerpen

OpenAlex ID: W2055220080

FWCI: 3.047

Cites: 25

Cited by: 36

Related to: 10