Work

Large-Scale Atomistic Modeling of Thermally Grown SiO2on Si(111) Substrate

Year: 2004

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.43.492

Authors: Kosuke Tatsumura, Takanobu Watanabe, Daisuke Yamasaki, Takayoshi Shimura, Masataka Umeno, Iwao Ohdomari

Institutions: Waseda University, Japan Science and Technology Agency, The University of Osaka, Fukui University of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2055464605

FWCI: 1.583

Cites: 10

Cited by: 17

Related to: 10