Observation of interface defects in thermally oxidized SiC using positron annihilation
Year: 2003
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1564637
Institution: Chalmers University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2056348656