Work

Germanium fin light-emitting diode

Year: 2011

Type: article

Abstract: We propose a germanium fin light-emitting diode for a monolithic light source on a Si photonics chip. The germanium fins were fabricated by the oxidation condensation of silicon-germanium sidewalls epitaxially grown on silicon fins. We found that a tensile stress is applied to the pure germanium fins by the difference of the thermal expansion coefficient with that of the surrounding oxide. The electroluminescence spectra were consistent with those expected from direct recombination in germanium with a tensile stress. The strong immunity of germanium fins against high current densities would be favourable to achieve population inversions by electrical pumping.

Source: Applied Physics Letters

DOI: 10.1063/1.3670053

Authors: S. Saito, K. Oda, T. Takahama, K. Tani, T. Mine

Institutions: Photonics Electronics Technology Research Association, Hitachi (Japan)

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: Council for Science and Technology Policy, Japan Society for the Promotion of Science

OpenAlex ID: W2056930945