Work

Influence of the C∕Si Ratio on the Dopant Concentration and Defects in CVD Grown 3C-SiC Homoepitaxial Layers

Year: 2010

Type: conference-paper

Source: AIP conference proceedings

DOI: 10.1063/1.3518304

Authors: N. Jegenyes, M. Marinova, G. Zoulis, J. Lorenzzi, A. Andreadou, A. Mantzari, V. Soulière, S. Juillaguet, J. Camassel, E. K. Polychroniadis, G. Ferro, Gabriel Ferro, Paul Siffert

Institutions: Lyon 1 Université, Centre National de la Recherche Scientifique, Aristotle University of Thessaloniki, Laboratoire des Multimatériaux et Interfaces, Université Montpellier 2

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2057217618

FWCI: 0.436

Cites:

Cited by: 4

Related to: 10