Work

InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination

Year: 2000

Type: article

Abstract: We have applied the modified droplet epitaxy method using sulfur termination to fabricate InAs quantum dots on GaAs(001) substrates for the first time. It is observed that the S-terminated surface effectively prevents the two-dimensional growth of InAs, forming InAs nanocrystals. From the magneto-photoluminescence measurements of this structure, three-dimensional quantum confinement effect was confirmed. This modified droplet epitaxy method is promising for the fabrication of quantum dots, not only in the lattice-matched system but also in the lattice-mismatched system.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.39.4580

Authors: Takaaki Mano, Katsuyuki Watanabe, Shiro Tsukamoto, Yasutaka Imanaka, Tadashi Takamasu, Hiroshi Fujioka, Giyu Kido, Masaharu Oshima, Nobuyuki Koguchi

Institutions: The University of Tokyo, Tokyo University of Science

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funder: University of Tokyo

OpenAlex ID: W2057520186

FWCI: 0.444

Cites: 17

Cited by: 22

Related to: 10