Year: 2007
Type: article
Abstract: We made an active-matrix high-efficiency electron emission device (HEED) that had scanning driver circuits fabricated with conventional MOS planer technology.A 1-in 256x192 pixel image sensor,consisting of the active-matrix HEED and a high-gain avalanche rushing amorphous photoconductor (HARP) target,was fabricated and tested as a step toward the development of ultrahigh-sensitivity compact image sensors with a large number of pixels.The experimental results show that the prototype sensor can be used to obtain clear images even under dark lighting conditions,such as in moonlight,and that the active-matrix HEED is a promising highspeed image pick-up device.
DOI: 10.3169/itej.61.387
Authors: Masakazu Nanba, Kazunori Miyakawa, Toshihisa Watabe, Saburo Okazaki, Kenkichi Tanioka, Norifumi Egami, Ryota Tanaka, Tomonari Nakada, Kazuto Sakemura, Yoshiyuki Okuda, Nobuyasu Negishi, Atsushi Watanabe, Takamasa Yoshikawa, Kiyohide Ogasawara, Akira Kobayashi, Koichi Ogusu, Nobuyoshi Koshida
Language: English
Topic: CCD and CMOS Imaging Sensors
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2057524657