Work

Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility

Year: 1993

Type: article

Abstract: We have studied the Raman spectra of the In x Ga1-x As y P1-y quaternary alloys lattice-matched to GaAs in the immiscible region. The spectra exhibit four modes of behavior due to four binary compositions: GaP-, InP-, GaAs-, and InAs-like phonon modes. It was found that the phonon spectra in the immiscible region are well explained by the isodisplacement model of Inoshita [J. Appl. Phys. 56 (1984) 2056].

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.32.2718

Authors: Touko Sugiura, Nobuyasu Hase, Hideo Goto, Shigeyasu Tanaka, Kazumasa Hiramatsu, Nobuhiko Sawaki, Isamu Akasaki

Institutions: National Institute of Technology, Toyota College, Nagoya University, Meijo University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2057856423

FWCI: 1.595

Cites: 14

Cited by: 13

Related to: 10