Work

W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition

Year: 1993

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.109275

Authors: A. Katz, A. El-Roy, A. Feingold, M. Geva, N. Moriya, S. J. Pearton, E. Lane, T. Keel, C. R. Abernathy

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2058040586

FWCI: 0.246

Cites: 13

Cited by: 8

Related to: 10