Memory effect and new polarized state in the incommensurate phase of TlGaSe2 ferroelectric – semiconductor
Year: 2011
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.3606465
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2058053751
