Phosphorus and Boron Doping of a-Si:H Effects of Deposition Temperature
Year: 1987
Type: article
Source: MRS Proceedings
DOI: 10.1557/proc-95-131
Authors: M. J. M. Pruppers, K. H. M. Maessen, J. Bezemer, F. H. P. M. Habraken, W. F. van der Weg
Institution: Utrecht University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2058724004
