Work

Highly repeatable multilevel resistive switching characteristics of an Au/TiO2/Ti memory device

Year: 2013

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/28/12/125001

Authors: D Acharyya, A Hazra, K Dutta, R K Gupta, P Bhattacharyya

Institutions: Indian Institute of Engineering Science and Technology, Shibpur, Birla Institute of Technology and Science, Pilani

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Academy of Scientific and Innovative Research

OpenAlex ID: W2058764885

FWCI: 1.2

Cites: 23

Cited by: 28

Related to: 10