Work

On melting of silicon carbide under pressure

Year: 2012

Type: article

Abstract: The melting of silicon carbide has been studied at pressures 5–8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of −44 ± 4 K/GPa.

Source: Journal of Superhard Materials

DOI: 10.3103/s1063457612050097

Authors: P. S. Sokolov, V. A. Mukhanov, T. Chauveau, V. L. Solozhenko

Institutions: Centre National de la Recherche Scientifique, Université Sorbonne Paris Nord, Laboratoire des Sciences des Procédés et des Matériaux

Language: English

Topic: High-pressure geophysics and materials

Subfield: Geophysics

Field: Earth and Planetary Sciences

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2058769694

FWCI: 1.414

Cites: 11

Cited by: 45

Related to: 10