Work

Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics

Year: 2011

Type: article

Abstract: Top-gate field-effect transistors (FETs) based on triangular silicon nanowires (SiNWs) obtained from a silicon bulk wafer using a conventional silicon manufacturing technology are constructed on flexible plastic substrates. Their field-effect mobility and peak transconductance are enhanced by 10% in the upwardly bent state and by 29% in the downwardly bent state at a strain of 1.02%, compared with the flat state. The strain effect resulting from the bending of the flexible substrates is higher in the downward state than in the upward state, and the increase in strain improves the performance of SiNW-based FETs. Moreover, their device performance is stable even after bending the substrate several thousand times.

Source: Japanese Journal of Applied Physics

DOI: 10.7567/jjap.50.065001

Authors: Jamin Koo, Youngin Jeon, Myeongwon Lee, Sangsig Kim

Institution: Korea University

Language: English

Topic: Nanowire Synthesis and Applications

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: Korea Science and Engineering Foundation, Ministry of Education, Science and Technology, Korea Evaluation Institute of Industrial Technology

Awards: G1862474303, G3805616885