Work

Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric

Year: 2003

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(03)00176-x

Authors: F. Lime, K. Oshima, M. Cassé, G. Ghibaudo, S. Cristoloveanu, B. Guillaumot, H. Iwai

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, STMicroelectronics (France), Tokyo Institute of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2059627237

FWCI: 4.791

Cites: 3

Cited by: 55

Related to: 10