Work

Improved thermally stable ohmic contacts on p-GaN based on W2B

Year: 2006

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2161806

Authors: L. Voss, Rohit Khanna, S. J. Pearton, F. Ren, I. Kravchenko

Institution: University of Florida

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2059821908

FWCI: 2.45

Cites: 44

Cited by: 13

Related to: 10