Work

Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells

Year: 1995

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-395-949

Authors: D.A.S. Loeber, J.M. Redwing, N.G. Anderson, M.A. Tischler

Institution: University of Massachusetts Amherst

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2059941550

FWCI: 0.423

Cites: 11

Cited by: 2

Related to: 10