Work

Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations

Year: 1993

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/1.578316

Authors: R. G. Dandrea, C. B. Duke

Institution: Xerox (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2060146737

FWCI: 1.276

Cites:

Cited by: 36

Related to: 10