Work

Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks

Year: 2005

Type: article

Source: Thin Solid Films

DOI: 10.1016/j.tsf.2005.08.409

Authors: Kenji Shiraishi, Keisaku Yamada, Kazuyoshi Torii, Yasushi Akasaka, Kiyomi Nakajima, Mitsuru Konno, Toyohiro Chikyow, Hiroshi Kitajima, Tsunetoshi Arikado, Yasuo Nara

Institutions: University of Tsukuba, National Institute for Materials Science, Waseda University, Semiconductor Leading Edge Technologies, Inc (Japan), Hitachi (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, University of Tokyo, University of Tsukuba

OpenAlex ID: W2061501686

FWCI: 1.844

Cites: 7

Cited by: 52

Related to: 10