Work

Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD

Year: 2011

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2011.03.004

Authors: Dai Hong Kim, Ji-Hwan Kwon, Miyoung Kim, Seong-Hyeon Hong

Institution: Seoul National University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Ministry of Education, Science and Technology

Award: G6487132529

OpenAlex ID: W2062590633

FWCI: 2.817

Cites: 43

Cited by: 34

Related to: 10