Work

TEM Study of the Behavior of Dislocations during ELO of GaN

Year: 1999

Type: article

Source: physica status solidi (b)

DOI: 10.1002/(sici)1521-3951(199911)216:1<691::aid-pssb691>3.0.co;2-8

Authors: V. Bousquet, P. Vennéguès, B. Beaumont, M. Vaille, P. Gibart

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2062860403

FWCI: 0.43

Cites:

Cited by: 7

Related to: 10