Work

Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

Year: 1998

Type: article

Abstract: Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The structural quality is studied by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy. Low-temperature photoluminescence (PL) and reflectivity demonstrate intrinsic excitonic emission. Room-temperature PL exhibits a strong band-edge intensity and a weak deep-level emission, the so-called yellow band. Finally, secondary ion mass spectroscopy is carried out to check the residual impurity levels of Si, C, and O.

Source: Journal of Applied Physics

DOI: 10.1063/1.366840

Authors: N. Grandjean, J. Massies, P. Vennéguès, M. Leroux, F. Demangeot, M. Renucci, J. Frandon

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Université Toulouse III - Paul Sabatier

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2063343589

FWCI: 9.842

Cites: 25

Cited by: 90

Related to: 10