Work

Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs

Year: 1994

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.358483

Authors: Y. Nabetani, T. Ishikawa, S. Noda, A. Sasaki

Institution: Kyoto University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2063638697

FWCI: 9.727

Cites: 20

Cited by: 244

Related to: 10