Work

Effect and comparison of co-doping of Ag, Ag+In, and Ag+Cl in ZnS:N/GaAs layers prepared by vapor-phase epitaxy

Year: 2000

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(00)00151-2

Authors: S. Kishimoto, T. Hasegawa, H. Kinto, O. Matsumoto, S. Iida

Institutions: National Institute of Technology, Kochi College, Nagaoka University of Technology, Niigata College of Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2063765484

FWCI: 2.596

Cites: 18

Cited by: 27

Related to: 10