On reverse gate leakage current of GaN high electron mobility transistors on silicon substrate
Year: 2013
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.4798257
Authors: Ling Xia, Allen Hanson, Timothy Boles, Donghyun Jin
Institution: Massachusetts Institute of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2063894635