Work

Extreme environment temperature sensor based on silicon carbide Schottky Diode

Year: 2009

Type: conference-paper

Source: CAS proceedings

DOI: 10.1109/smicnd.2009.5336658

Authors: Ioana Josan, C. Boianceanu, G. Brezeanu, V. Obreja, Marioara Avram, D. Puscasu, A. Ioncea

Institutions: Universitatea Națională de Știință și Tehnologie Politehnica București, National Institute for Research and Development in Microtechnologies, Metav (Romania)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2064076201

FWCI: 0.479

Cites: 4

Cited by: 27

Related to: 10