Work

Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon

Year: 1998

Type: article

Abstract: Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping have been proposed and analyzed, using a procedure allowing to reduce the number of required matrix elements of transitions. The first mechanism is based on the resonance interaction of the 2p0 state in Si:Bi with optical phonons. The other one is based on the suppression of acoustic-phonon-assisted relaxation from the 2p0 state in Si:P due to the momentum conservation law. Spontaneous emission was registered from shallow donors in Si:P under photoionization by a CO2 laser. The dependence of the spontaneous emission intensity on the intensity of pumping radiation confirms the possibility of amplification on impurity transitions.

Source: physica status solidi (b)

DOI: 10.1002/(sici)1521-3951(199812)210:2<859::aid-pssb859>3.0.co;2-q

Authors: E.E. Orlova, R.Ch. Zhukavin, S.G. Pavlov, V.N. Shastin

Institutions: Russian Academy of Sciences, Institute for Physics of Microstructures

Language: English

Topic: Photorefractive and Nonlinear Optics

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Deutsche Forschungsgemeinschaft, Russian Foundation for Basic Research

OpenAlex ID: W2064720684

FWCI: 1.134

Cites:

Cited by: 32

Related to: 10