Work

Modelling DC characteristics of GaAs MESFETs in a wide range of temperatures

Year: 2001

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/1099-1204(200101/02)14:1<1::aid-jnm392>3.0.co;2-2

Authors: Agostino Giorgio, Anna Gina Perri

Institution: Polytechnic University of Bari

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2064723464

FWCI:

Cites: 11

Cited by:

Related to: 10