Year: 2009
Type: article
Abstract: The electrical characteristics of lightly doped n -channel FinFETs with a TiN/HfO 2 gate stack have been thoroughly studied by experiments and numerical device simulations in terms of the fin width and gate length. Analysis of the experimental transfer characteristics shows that the effective work function of the gate stack increases with decreasing fin width, which is attributed to a negative interface charge due to different stoichiometry of the top-gate and side-gate interfaces. Furthermore, valuable design insights into the performance of 60 and 30 nm gate length FinFETs are provided. The influence of the doping concentration and length of the source/drain extension on the device performance is extensively analyzed. Based on experimental and simulation data, the results provide optimal technological parameters of the extension under the spacer for improving the performance of the FinFET device.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2065100511