Electrical transport characterizations of nitrogen doped ZnSe and ZnTe films
Year: 1994
Type: article
Source: Journal of Electronic Materials
DOI: 10.1007/bf02670630
Authors: Y. Fan, J. Han, L. He, J. Saraie, R. L. Gunshor, M. Hagerott, A. V. Nurmikko
Institutions: Purdue University West Lafayette, Brown University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2065582295