Work

Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Year: 2007

Type: article

Abstract: Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of ∼10(3) and a field-effect mobility of 4.1 cm(2) V(-1) s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of ∼10(3) and a field-effect mobility of 4.0 cm(2) V(-1) s(-1).

Source: Nanotechnology

DOI: 10.1088/0957-4484/19/01/015204

Authors: Jaewon Jang, Kyoungah Cho, Sang Heon Lee, Sangsig Kim

Institutions: Korea University, Sun Moon University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funder: Korea Science and Engineering Foundation

OpenAlex ID: W2065624918

FWCI: 2.081

Cites: 22

Cited by: 39

Related to: 10