Work

Determination of the critical indium composition corresponding to the metal–insulator transition in In Ga1−N (0.06 ⩽x⩽ 0.135) layers

Year: 2009

Type: article

Source: Current Applied Physics

DOI: 10.1016/j.cap.2009.10.004

Authors: A. Yildiz, S.B. Lisesivdin, P. Tasli, E. Ozbay, M. Kasap

Institutions: Ankara University, Ahi Evran University, Bilkent University, Gazi University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, Türkiye Bilimler Akademisi

Awards: Bilkent Üniversitesi nanoteknoloji araştırma merkezi destekleme projesi (NANOTR), Enformatik, optoelektronik ve nanofotonik uygulamaları için GaN temelli ışık kaynakları, G8967657412

OpenAlex ID: W2066227830

FWCI: 1.025

Cites: 25

Cited by: 4

Related to: 10