Work

Phase separation suppression in InGaN epitaxial layers due to biaxial strain

Year: 2002

Type: article

Abstract: Phase separation suppression due to external biaxial strain is observed in InxGa1−xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam epitaxy on unstrained GaN(001) buffers. Ab initio calculations carried out for the alloy free energy predict and Raman measurements confirm that biaxial strain suppress the formation of phase-separated In-rich quantum dots in the InxGa1−xN layers. Since quantum dots are effective radiative recombination centers in InGaN, we conclude that strain quenches an important channel of light emission in optoelectronic devices based on pseudobinary group-III nitride semiconductors.

Source: Applied Physics Letters

DOI: 10.1063/1.1436270

Authors: A. Tabata, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, A. Kharchenko, T. Frey, D. J. As, D. Schikora, K. Lischka, J. Furthmüller, F. Bechstedt

Institutions: Universidade de São Paulo, Paderborn University, Friedrich Schiller University Jena

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Deutsche Forschungsgemeinschaft, Fundação de Amparo à Pesquisa do Estado de São Paulo, Conselho Nacional de Desenvolvimento Científico e Tecnológico

OpenAlex ID: W2068340283

FWCI: 5.237

Cites: 10

Cited by: 112

Related to: 10