Work

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

Year: 2014

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.4896970

Authors: M. Auf der Maur, B. Galler, I. Pietzonka, M. Strassburg, H. Lugauer, A. Di Carlo

Institutions: University of Rome Tor Vergata, Osram Opto Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: European Commission

Award: Nanostructured Efficient White LEDs based on short-period superlattices and quantum dots

OpenAlex ID: W2068340717

FWCI: 3.721

Cites: 21

Cited by: 111

Related to: 10