Work

Effect of magnetic field on the current-voltage characteristic of the n-GaAs-p-Ge heterojunction

Year: 2008

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782608090066

Authors: M. M. Gadjialiev, Z. Sh. Pirmagomedov

Institutions: Russian Academy of Sciences, Dagestan Scientific Center of the Russian Academy of Sciences, Institute of Physics. HI Amirkhanova

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2068540902

FWCI:

Cites:

Cited by: 1

Related to: 10